MSB709-RT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSB709- RT1/D PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 Motorola Preferred Device 3 2 1 2 BASE 1 EMITTER Unit Vdc Vdc Vdc m Adc m Adc MAXIMUM RATINGS (TA = 25°C) Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Collector Current - Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value - 60 - 45 - 7.0 - 100 - 200 CASE 318D- 03, STYLE 1 SC- 59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 - 55 ~ +150 Unit m W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector- Emitter Breakdown Voltage (IC = - 2.0 m Adc, IB = 0) Collector- Base Breakdown Voltage (IC = - 10 µAdc, IE = 0) Emitter- Base Breakdown Voltage (IE = - 10 µAdc, IE = 0) .. Collector- Base Cutoff Current (VCB = - 45 Vdc, IE = 0) Collector- Emitter Cutoff Current (VCE = - 10 Vdc, IB = 0) DC Current Gain(1) (VCE = - 10 Vdc, IC = - 2.0 m Adc) Collector- Emitter Saturation Voltage (IC = - 100 m Adc, IB = - 10 m Adc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO h FE1 VCE(sat) Min - 45 - 60 - 7.0 - - 210 - Max - - - -...